0 × 1016 cm-2. Such phenomenon has also been observed A-1155463 research buy in implanted Si systems and explained well by Eckstein [18, 19]. For higher implantation fluences, the Pb content saturates at 2.7 × 1016 cm-2 indicating that a steady state is reached between the ions removed by surface sputtering and those added via implantation. By assuming the sputtering yield of Al is the same as the one with low implantation fluence (<4.0 × 1016 cm-2), the sputtered thickness of Al at the beginning of the steady state (with the fluence of 8.0 × 1016 cm-2) is estimated to be approximately

41 nm, which is comparable with the projected range of 90 keV Pb in Al (36 nm). Figure 3 Random RBS spectra for the samples with fluences ranging from 0.4 × 10 16 to 3.4 × 10 16   cm -2 . Implantation current density is 2.0 μAcm-2. The dashed line is a guide for the eye for the shift of the depth profile with increasing fluence. The arrow labeled with Pb indicates the energy for backscattering from Pb atoms at the surface. The Pb depth profile for the sample with

the implantation fluence f = 0.7 × 1016 cm-2 is shown in Figure 4. Compared with the simulated depth profile obtained from the Transport of Ions in Matter (TRIM) program (with a random incident ion implantation) [20], the broadening of the Pb depth profile obtained from RBS result is much larger. This can be attributed to (i) the relatively lower stopping power for channeling implanted ions and (ii) migration AZD5363 molecular weight of Pb atoms in Al caused by the ion irradiation related Histamine H2 receptor heating selleck inhibitor effects [21]. Figure 4 Experimental Pb depth profile in Al (solid squares) obtained from RBS. The solid line is a theoretical profile obtained from the TRIM program. Size evaluation of Pb nanoparticles in Al Figure 5a shows the XRD θ-2θ scans for a virgin Al sample and for

the samples with the implantation current density at 2.0 μAcm-2 and implanted up to different fluences. For all samples, the only detectable Pb peak is the Pb(111) diffraction at 2θ ≈ 31.3°, confirming that the Pb particles are highly oriented with respect to the host Al(111) matrix [8]. The defects, such as vacancies, introduced by ion bombardment are expected to lead to a peak shift of Al. Such phenomenon is generally observed in implanted systems [22]. In order to accurately determine the lattice of the Pb NPs, XRD signals from the Pb NPs were carefully monitored by θ-2θ scans with 2θ ranging between 30.0° and 32.7°. The Pb(111) diffraction profiles of the samples with different implantation fluences are plotted in Figure 5b after subtracting the background signal. It can be seen that all the peak positions are consistent with the bulk value (31.30°) indicating that the embedded Pb NPs are strain free. The commensurate condition 4a Pb ≈ 5a Al, with a Pb and a Al the lattice parameters of Pb and Al, indicates a small lattice mismatch within 2% [23].