Four-terminal zero bias sheet resistance R □ was measured with a

Four-terminal zero bias sheet resistance R □ was measured with a DC bias current I=1 µA, and the offset voltage was removed by inverting the bias polarity. To access the electron conduction only through the ( )-In surface at low temperatures, Si(111) substrates without intentional doping (resistivity R>1,000 Ω cm) were used. Leak currents through the substrate and the Ar +-sputtered surface region were undetectably small below 20 K, which allowed precise measurements in this temperature region. Results and discussion Electron transport properties above T c In selleck the present study, we investigated seven samples referred to as

S1, S2,… and S7. They were prepared through the {Selleck Anti-infection Compound Library|Selleck Antiinfection Compound Library|Selleck Anti-infection Compound Library|Selleck Antiinfection Compound Library|Selleckchem Anti-infection Compound Library|Selleckchem Antiinfection Compound Library|Selleckchem Anti-infection Compound Library|Selleckchem Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|Anti-infection Compound Library|Antiinfection Compound Library|buy Anti-infection Compound Library|Anti-infection Compound Library ic50|Anti-infection Compound Library price|Anti-infection Compound Library cost|Anti-infection Compound Library solubility dmso|Anti-infection Compound Library purchase|Anti-infection Compound Library manufacturer|Anti-infection Compound Library research buy|Anti-infection Compound Library order|Anti-infection Compound Library mouse|Anti-infection Compound Library chemical structure|Anti-infection Compound Library mw|Anti-infection Compound Library molecular weight|Anti-infection Compound Library datasheet|Anti-infection Compound Library supplier|Anti-infection Compound Library in vitro|Anti-infection Compound Library cell line|Anti-infection Compound Library concentration|Anti-infection Compound Library nmr|Anti-infection Compound Library in vivo|Anti-infection Compound Library clinical trial|Anti-infection Compound Library cell assay|Anti-infection Compound Library screening|Anti-infection Compound Library high throughput|buy Antiinfection Compound Library|Antiinfection Compound Library ic50|Antiinfection Compound Library price|Antiinfection Compound Library cost|Antiinfection Compound Library solubility dmso|Antiinfection Compound Library purchase|Antiinfection Compound Library manufacturer|Antiinfection Compound Library research buy|Antiinfection Compound Library order|Antiinfection Compound Library chemical structure|Antiinfection Compound Library datasheet|Antiinfection Compound Library supplier|Antiinfection Compound Library in vitro|Antiinfection Compound Library cell line|Antiinfection Compound Library concentration|Antiinfection Compound Library clinical trial|Antiinfection Compound Library cell assay|Antiinfection Compound Library screening|Antiinfection Compound Library high throughput|Anti-infection Compound high throughput screening| identical procedure as described above, but due to subtle variations in the condition, they exhibit slightly different electron transport properties. As representative data, the temperature dependences of sheet resistance R □ for S1 and S2 are displayed in Figure 2 (red dots, S1; blue dots, S2). R □ drops to zero at T c ≈2.6 K for S1 and at T c ≈3.0 K for S2, consistent with the previous https://www.selleckchem.com/products/LBH-589.html study on the superconducting phase transition [8]. The rest of the samples show the same qualitative behaviors. As

shown below, S1 and S2 exhibit the lowest and the highest T c , respectively, among all the samples. Here we note two distinctive features: (i) For the high-temperature region of 5 K0. The temperature dependence of R Fossariinae □ is slightly nonlinear with a concave curvature, i.e., d 2 R □/d T 2>0. (ii) The decrease in R □ is progressively accelerated as T approaches T c . Figure 2 Electron transport properties above T c . The red and blue dots represent the temperature dependences of sheet resistance R □ for sample S1 and S2, respectively, while the yellow and green lines are the results of fitting analysis using

Equations 1 to 3. Δ R □ is defined as the decrease in R □ between 20 and 5 K. The inset shows T c as a function of R n,res, revealing no clear correlation between them. The data were analyzed to deduce characteristic parameters as follows. Feature (i) can be phenomenologically expressed by the 2D normal state conductivity G □,n of the following form: (1) where R n,res is the residual resistance in the normal state, C is the prefactor, and a is the exponent of the power-law temperature dependence. Feature (ii) is naturally attributed to the superconducting fluctuation effects [14]. Just above T c , parallel conduction due to thermally excited Cooper pairs adds to the normal electron conduction (Aslamazov-Larkin (AL) term), and this effect is enhanced in a 2D systems [12]. The 2D conductivity due to the Cooper pair fluctuation G □,sf takes the following form: (2) where R 0 is a temperature-independent constant.

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