It makes Φ rt move to the right in energy to appear in the photovoltage spectra as Φ 0. Two processes can be mixed in this conditions, band-to-band transition with separation of electron-hole Pritelivir pairs and electron injection into the silicide over the potential barrier, both generating photo-emf. In addition, a reduction of n may increase barriers at the interface [25, 26]; a usual Ni silicide barrier (around 0.7 eV) may be completely restored at some domains or be still reduced (around 0.5 eV) at different places. Hole injection into the silicide

layer from polysilicon grain boundaries may become more probable over reduced barriers to holes. This statement finds confirmation in the spectra plotted in Figure 5 which have been obtained under irradiation of a diode by a wide-band IR radiation of a tungsten bulb filtered by a polished Si wafer (h ν

on the sample, the stronger the curves bow in the high-energy part of the graph and the lesser values of the photo-emf are detected. It may be caused by injection of holes from potential wells at grain boundaries Rapamycin of poly-Si into the silicide film because of additional wide-band IR lighting of the sample resulting in charge reduction of both the silicide and polysilicon layers. Figure 5 Photovoltage spectra obtained at 80 K. The diode is irradiated by the light of a tungsten lamp through a Si filter. The power density of light with h νcAMP are guides to the eye. Thus, a set of competing processes becomes possible at 80 K. Non-uniformity of the spatial potential throughout the Ni silicide/poly-Si interface may locally act in favor of one of these competing processes. As a consequence, the impact of several barriers is observed in the photoresponse

spectra in the order of magnitude of contribution of processes associated with them to the resultant photo-emf in different spectral ranges. Investigating the temperature dependences of the I-V characteristics close and above the room temperature, we have found the thermal sensitivity of the diodes to be sufficiently high to consider them as potential elements of uncooled bolometers. Figure 6a,b demonstrates temperature dependences of the forward and reverse currents of the diodes (I), respectively, for fixed (and stabilized) voltages (U). Temperature coefficient of the sensor current TCS =d[ lnS(T)]/d T, where S=I, derived from the graphs presented in Figure 6a,b as a function of bias voltage (Figure 6c) varies from −0.3%/℃ to −0.6%/℃ for the forward bias and remains nearly constant around 2.5 %/℃ for the reverse bias. Notice that at small values of the forward bias, TCS is positive but rapidly drops with the growth of the absolute bias and equals 0 at U≈−1 V.