Photogenerated carriers in a SiNW diffuse into the electric region as see more diffusion current, reach the depletion region, and are collected as photocurrent. If the effective diffusion length is longer than the SiNW length, photogenerated carriers at the bottom region can be also collected as photocurrent. Since 13.5 μm is longer than the length, it is expected that most of the photogenerated

carriers can be collected. Therefore, Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as p-type SiNW arrays. Moreover, it is effective to use a fixed charge in the passivation of SiNW arrays with dangling bonds. Figure 8 Lifetime and diffusion length in SiNW pre-ALD, as-deposited, EX 527 in vitro and post-annealing. Conclusions We successfully prepared SiNW arrays embedded in Al2O3 by using the MACES technique and the subsequent ALD deposition. HAADF-STEM clearly indicates that the SiNW was completely covered with Al2O3. This ALD-Al2O3 passivation film reduced surface recombination velocity at the surface of SiNW. The as-deposited Al2O3 increased minority carrier lifetime in the sample from 1.6 to 5 μs. Moreover, the lifetime improved up to 27 μs after annealing. These results indicate that ALD-Al2O3 is beneficial click here for the passivation of

SiNW surfaces. In addition, we analyzed lifetime data in details to estimate minority carrier diffusion length of the SiNW region. According to the data analysis, we finally derived a simple analytical equation to extract the lifetime of the SiNW region from measured effective lifetime of the samples. Using the equation, it was found that the effective diffusion length of minority carriers

in the SiNW array increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing ASK1 at 400°C. This improvement of the diffusion length is very important for application to solar cells. The larger diffusion length leads to better carrier collection in solar cells, and improvement of short-circuit current can be expected. Acknowledgements This work was supported in part by JST, PRESTO, and the Nissan Foundation for Promotion of Science. References 1. Kurokawa Y, Kato S, Watanabe Y, Yamada A, Konagai M, Ohta Y, Niwa Y, Hirota M: Numerical approach to the investigation of performance of silicon nanowire solar cells embedded in a SiO 2 matrix. Jpn J Appl Phys 2012, 51:11PE12.CrossRef 2. Tsakalakos L, Balch J, Fronheiser J, Shih MY, LeBoeuf SF, Pietrzykowski M, Codella PJ, Korevaar BA, Sulima O, Rand J, Davuluru A, Rapol UD: Strong broadband optical absorption in silicon nanowire films. J Nanophotonics 2007. doi:10.1117/1.2768999 3. Lin CX, Povinelli ML: Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications. Opt Express 2009, 17:19371–19381.CrossRef 4.