Without any additional facility, patterns can be easily fabricated by directly scratching a diamond tip on silicon substrate along the target trace and post-etching [16]. In this method, an affected layer is formed on the scratched area. Due to its resistance to alkaline solution, the affected layer can serve as an etching mask (defined as tribo-mask) for fabricating protrusive structures [17, 18]. However, the etching selectivity of tribo-mask/Si(100) in KOH solution is low and uncontrollable [19].
When etching for a long time, the collapse may occur in the upper part of the structure [20]. Due to the restriction by the above factors, the maximum fabrication depth is generally less than 700 nm, which to some extent limits the application of the fabricated VS-4718 order RepSox purchase nanostructures [18]. To broaden the range of fabrication depth to micron scale, it is necessary to develop new fabrication methods with a high-quality mask. Since the etching selectivity of Si(100)/Si3N4 in KOH solution is about 2,600:1, the Si3N4 mask may be a good candidate by virtue of its excellent resistance to chemical attack [21]. In this paper, the friction-induced selective etching behavior of the Si3N4 mask on Si(100) surface was investigated. Effect of normal load and KOH etching
period on fabrication depth was separately clarified. Based on the scanning Auger nanoprobe analysis, the fabrication mechanism of the 17-DMAG (Alvespimycin) HCl proposed method was discussed. Finally, a large-area texture pattern with depth of several microns was attempted on Si(100) surface. The results may provide
a simple, flexible, and less destructive way toward patterning a deep structure on silicon surface. Methods Si(100) wafers coated with low-pressure chemical vapor deposition (LPCVD) Si3N4 films (Si/Si3N4) were purchased from Hefei Kejing Materials Technology, Hefei, China. X-ray photoelectron spectroscopy (XPS; XSAM800, Kratos, Manchester, UK) detection revealed that the deposited films were stoichiometric Si3N4. Scanning Auger nanoprobe (PHI 700, ULVAC-PHI, Inc., Kanagawa, Japan) detection indicated that the thickness of Si3N4 films was about 50 nm. Using an atomic force microscope (AFM; SPI3800N, Seiko, Tokyo, Japan), the root-mean-square (RMS) roughness of the Si/Si3N4 samples was measured to be 0.4 nm over a 2 μm × 2 μm area. The elastic modulus of the Si3N4 film was estimated to be 240 GPa by nanoindentation with a spherical diamond tip [22]. The whole fabrication process consisted of four steps, as shown in Figure 1. Firstly, scratching was performed on the Si/Si3N4 sample by a spherical diamond tip under a proper normal load (Figure 1a). Secondly, the Si3N4 film was selectively etched in SCH727965 hydrofluoric acid (HF) solution until the Si substrate was exposed on the scratched area (Figure 1b).